검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
On the electron mobility enhancement in biaxially strained Si MOSFETs Driussi F, Esseni D, Selmi L, Hellstrom PE, Malm G, Hallstedt J, Ostling M, Grasby TJ, Leadley DR, Mescot X Solid-State Electronics, 52(4), 498, 2008 |
| 2 |
The effect of C on emitter-base design for a single-polysilicon SiGe : C HBT with an IDP emitter Haralson E, Suvar E, Malm G, Radamson H, Wang YB, Ostling M Applied Surface Science, 224(1-4), 330, 2004 |
| 3 |
Device design for a raised extrinsic base SiGe bipolar technology Haralson E, Malm G, Ostling M Solid-State Electronics, 48(10-11), 1927, 2004 |