화학공학소재연구정보센터
검색결과 : 8건
No. Article
1 80 ns/45 GHz Pulsed measurement system for DC and RF characterization of high speed microwave devices
Weiss M, Fregonese S, Santorelli M, Sahoo AK, Maneux C, Zimmer T
Solid-State Electronics, 84, 74, 2013
2 Multiscale simulation of carbon nanotube transistors
Maneux C, Fregonese S, Zimmer T, Retailleau S, Nguyen HN, Querlioz D, Bournel A, Dollfus P, Triozon F, Niquet YM, Roche S
Solid-State Electronics, 89, 26, 2013
3 Electrical compact modelling of graphene transistors
Fregonese S, Meng N, Nguyen HN, Majek C, Maneux C, Happy H, Zimmer T
Solid-State Electronics, 73, 27, 2012
4 A versatile compact model for ballistic 1D transistor: GNRFET and CNTFET comparison
Fregonese S, Maneux C, Zimmer T
Solid-State Electronics, 54(11), 1332, 2010
5 Technological dispersion in CNTFET: Impact of the presence of metallic carbon nanotubes in logic circuits
Fregonese S, Maneux C, Zimmer T
Solid-State Electronics, 53(10), 1103, 2009
6 Thin film SOIHBT: A study of the effect of substrate bias on the electrical characteristics
Fregonese S, Avenier G, Maneux C, Chantre A, Zimmer T
Solid-State Electronics, 50(11-12), 1673, 2006
7 Two-dimensional DC simulation methodology for InP/GaAs0.51Sb0.49/InP heterojunction bipolar transistor
Maneux C, Belhaj M, Grandchamp B, Labat N, Touboul A
Solid-State Electronics, 49(6), 956, 2005
8 A scalable substrate network for compact modelling of deep trench insulated HBT
Fregonese S, Celi D, Zimmer T, Maneux C, Sulima PY
Solid-State Electronics, 49(10), 1623, 2005