검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics Wu TL, Marcon D, Ronchi N, Bakeroot B, You SZ, Stoffels S, Van Hove M, Bisi D, Meneghini M, Groeseneken G, Decoutere S Solid-State Electronics, 103, 127, 2015 |
| 2 |
Analysis of off-state leakage mechanisms in GaN-based MIS-HEMTs: Experimental data and numerical simulation Marino FA, Bisi D, Meneghini M, Verzellesi G, Zanoni E, Van Hove M, You S, Decoutere S, Marcon D, Stoffels S, Ronchi N, Meneghesso G Solid-State Electronics, 113, 9, 2015 |