화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 Proton-induced SEU in SiGe digital logic at cryogenic temperatures
Sutton AK, Moen K, Cressler JD, Carts MA, Marshall PW, Pellish JA, Ramachandran V, Reed RA, Alles ML, Nju G
Solid-State Electronics, 52(10), 1652, 2008
2 Proton and gamma radiation effects in a new first-generation SiGeHBT technology
Haugerud BM, Pratapgarhwala MM, Comeau JP, Sutton AK, Prakash APG, Cressler JD, Marshall PW, Marshall CJ, Ladbury RL, El-Diwany M, Mitchell C, Rockett L, Bach T, Lawrence R, Haddad N
Solid-State Electronics, 50(2), 181, 2006
3 An investigation of the effects of radiation exposure on stability constraints in epitaxial SiGe strained layers
Chen TB, Sutton AK, Haugerud BM, Henderson W, Prakash APG, Cressler JD, Doolittle A, Liu XF, Joseph A, Marshall PW
Solid-State Electronics, 50(7-8), 1194, 2006
4 Proton response of low-frequency noise in 0.20 mu m 90 GHz f(T) UHV/CVD SiGeHBTs
Jin ZR, Cressler JD, Niu GF, Marshall PW, Kim HS, Reed R, Joseph AJ
Solid-State Electronics, 47(1), 39, 2003
5 The effects of operating bias conditions on the proton tolerance of SiGeHBTs
Zhang SM, Cressler JD, Niu GF, Marshall CJ, Marshall PW, Kim HS, Reed RA, Palmer MJ, Joseph AJ, Harame DL
Solid-State Electronics, 47(10), 1729, 2003