검색결과 : 1건
| No. | Article |
|---|---|
| 1 |
C-doped GaN buffer layers with high breakdown voltages for high-power operation AlGaN/GaN HFETs on 4-in Si substrates by MOVPE Kato S, Satoh Y, Sasaki H, Masayuki I, Yoshida S Journal of Crystal Growth, 298, 831, 2007 |
| No. | Article |
|---|---|
| 1 |
C-doped GaN buffer layers with high breakdown voltages for high-power operation AlGaN/GaN HFETs on 4-in Si substrates by MOVPE Kato S, Satoh Y, Sasaki H, Masayuki I, Yoshida S Journal of Crystal Growth, 298, 831, 2007 |