검색결과 : 33건
| No. | Article |
|---|---|
| 1 |
Properties of AlN layers grown on c-sapphire substrate using ammonia assisted MBE Matta S, Brault J, Korytov M, Vuong TQP, Chaix C, Al Khalfioui M, Vennegues P, Massies J, Gil B Journal of Crystal Growth, 499, 40, 2018 |
| 2 |
Optical properties of InxGa1-xN/GaN quantum-disks obtained by selective area sublimation Damilano B, Vezian VS, Portail M, Alloing B, Brault J, Courville A, Brandli BV, Leroux M, Massies J Journal of Crystal Growth, 477, 262, 2017 |
| 3 |
AIN interlayer to improve the epitaxial growth of SmN on GaN (0001) Vezian S, Damilano B, Natali E, Al Khalfioui M, Massies J Journal of Crystal Growth, 450, 22, 2016 |
| 4 |
Evidences of defect contribution in magnetically ordered Sm-implanted GaN Lo FY, Guo JY, Huang CD, Chou KC, Liu HL, Ney V, Ney A, Chern MY, Shvarkov S, Reuter D, Wieck AD, Pezzagna S, Massies J Current Applied Physics, 14, S7, 2014 |
| 5 |
Ultra-violet GaN/Al0.5Ga0.5N quantum dot based light emitting diodes Brault J, Damilano B, Kahouli A, Chenot S, Leroux M, Vinter B, Massies J Journal of Crystal Growth, 363, 282, 2013 |
| 6 |
Polarized emission from GaN/AlN quantum dots subject to uniaxial thermal interfacial stresses Moshe O, Rich DH, Damilano B, Massies J Journal of Vacuum Science & Technology B, 28(4), C5E25, 2010 |
| 7 |
Strain engineering in GaN layers grown on silicon by molecular beam epitaxy: The critical role of growth temperature Cordier Y, Baron N, Chenot S, Vennegues P, Tottereau O, Leroux M, Semond F, Massies J Journal of Crystal Growth, 311(7), 2002, 2009 |
| 8 |
AlN buffer layer growth for GaN epitaxy on (111) Si: Al or N first? Le Louarn A, Vezian S, Semond F, Massies J Journal of Crystal Growth, 311(12), 3278, 2009 |
| 9 |
Subsurface Fe-doped semi-insulating GaN templates for inhibition of regrowth interface pollution in AlGaN/GaN HEMT structures Cordier Y, Azize M, Baron N, Bougrioua Z, Chenot S, Tottereau O, Massies J, Gibart P Journal of Crystal Growth, 310(5), 948, 2008 |
| 10 |
Proceedings of the EMRS 2007 Fall Meeting Symposium H: Current Trends in Optical and X-Ray Metrology of Advanced Materials and Devices II, Warsaw, Poland Servet B, Tomozeiu N, Modreanu M, Durand O, Jellison GE, Massies J Thin Solid Films, 516(22), 7953, 2008 |