| 1 |
Silicon and silicon-germanium nanoparticles obtained by Pulsed Laser Deposition
Stock F, Diebold L, Antoni F, Gowda CC, Muller D, Haffner T, Pfeiffer P, Roques S, Mathiot D
Applied Surface Science, 466, 375, 2019 |
| 2 |
Dopant diffusion and activation induced by sub-melt laser anneal within the co-implanted p plus polycrystalline silicon gate used in CMOS technologies
Colin A, Morin P, Beneyton R, Pinzelli L, Mathiot D, Fogarassy E
Thin Solid Films, 518(9), 2390, 2010 |
| 3 |
Modeling of phosphorus diffusion in Ge accounting for a cubic dependence of the diffusivity with the electron concentration
Canneaux T, Mathiot D, Ponpon JP, Leroy Y
Thin Solid Films, 518(9), 2394, 2010 |
| 4 |
Atomic-scale study of the role of carbon on boron clustering
Philippe T, Duguay S, Grob JJ, Mathiot D, Blavette D
Thin Solid Films, 518(9), 2406, 2010 |
| 5 |
An advanced explicit surface potential model physically accounting for the quantization effects in deep-submicron MOSFETs
Pregaldiny F, Lallement C, van Langevelde R, Mathiot D
Solid-State Electronics, 48(3), 427, 2004 |
| 6 |
Accounting for quantum mechanical effects from accumulation to inversion, in a fully analytical surface-potential-based MOSFET model
Pregaldiny F, Lallement C, Mathiot D
Solid-State Electronics, 48(5), 781, 2004 |
| 7 |
Long-pulse duration excimer laser annealing of Al+ ion implanted 4H-SiC for pn junction formation
Dutto C, Fogarassy E, Mathiot D, Muller D, Kern P, Ballutaud D
Applied Surface Science, 208, 292, 2003 |
| 8 |
A simple efficient model of parasitic capacitances of deep-submicron LDD MOSFETs
Pregaldiny F, Lallement C, Mathiot D
Solid-State Electronics, 46(12), 2191, 2002 |
| 9 |
Numerical and experimental analysis of pulsed excimer laser processing of silicon carbide
Dutto C, Fogarassy E, Mathiot D
Applied Surface Science, 184(1-4), 362, 2001 |
| 10 |
Grain-Boundary Enhanced Oxygen Out-Diffusion in Annealed Polycrystalline Si/SiO2/Crystalline Si Structures
Devine RA, Mathiot D, Xu JB, Wilson IH, Gauneau M, Warren WL
Thin Solid Films, 286(1-2), 317, 1996 |
