화학공학소재연구정보센터
검색결과 : 10건
No. Article
1 Surface etching mechanism of silicon nitride in fluorine and nitric oxide containing plasmas
Kastenmeier BEE, Matsuo PJ, Oehrlein GS, Ellefson RE, Frees LC
Journal of Vacuum Science & Technology A, 19(1), 25, 2001
2 High-density plasma patterning of low dielectric constant polymers: A comparison between polytetrafluoroethylene, parylene-N, and poly(arylene ether)
Standaert TEFM, Matsuo PJ, Li X, Oehrlein GS, Lu TM, Gutmann R, Rosenmayer CT, Bartz JW, Langan JG, Entley WR
Journal of Vacuum Science & Technology A, 19(2), 435, 2001
3 Patterning of fluorine-, hydrogen-, and carbon-containing SiO2-like low dielectric constant materials in high-density fluorocarbon plasmas: Comparison with SiO2
Standaert TEFM, Matsuo PJ, Allen SD, Oehrlein GS, Dalton TJ
Journal of Vacuum Science & Technology A, 17(3), 741, 1999
4 Silicon etching in NF3/O-2 remote microwave plasmas
Matsuo PJ, Kastenmeier BEE, Oehrlein GS, Langan JG
Journal of Vacuum Science & Technology A, 17(5), 2431, 1999
5 Highly selective etching of silicon nitride over silicon and silicon dioxide
Kastenmeier BEE, Matsuo PJ, Oehrlein GS
Journal of Vacuum Science & Technology A, 17(6), 3179, 1999
6 Effect of capacitive coupling on inductively coupled fluorocarbon plasma processing
Schaepkens M, Rueger NR, Beulens JJ, Li X, Standaert TEFM, Matsuo PJ, Oehrlein GS
Journal of Vacuum Science & Technology A, 17(6), 3272, 1999
7 Characterization of Al, Cu, and TiN surface cleaning following a low-K dielectric etch
Matsuo PJ, Standaert TEFM, Allen SD, Oehrlein GS, Dalton TJ
Journal of Vacuum Science & Technology B, 17(4), 1435, 1999
8 Remote plasma etching of silicon nitride and silicon dioxide using NF3/O-2 gas mixtures
Kastenmeier BEE, Matsuo PJ, Oehrlein GS, Langan JG
Journal of Vacuum Science & Technology A, 16(4), 2047, 1998
9 Role of N-2 Addition on CF4/O-2 Remote Plasma Chemical Dry-Etching of Polycrystalline Silicon
Matsuo PJ, Kastenmeier BE, Beulens JJ, Oehrlein GS
Journal of Vacuum Science & Technology A, 15(4), 1801, 1997
10 Chemical Dry-Etching of Silicon-Nitride and Silicon Dioxide Using CF4/O-2/N-2 Gas-Mixtures
Kastenmeier BE, Matsuo PJ, Beulens JJ, Oehrlein GS
Journal of Vacuum Science & Technology A, 14(5), 2802, 1996