검색결과 : 11건
| No. | Article |
|---|---|
| 1 |
X-ray diffraction on stacking faults in 3C-SiC epitaxial microcrystals grown on patterned Si(001) wafers Meduna M, Kreiliger T, Mauceri M, Puglisi M, Mancarella F, La Via F, Crippa D, Miglio L, von Kanel H Journal of Crystal Growth, 507, 70, 2019 |
| 2 |
Protrusions reduction in 3C-SiC thin film on Si Zimbone M, Mauceri M, Litrico G, Barbagiovanni EG, Bongiorno C, La Via F Journal of Crystal Growth, 498, 248, 2018 |
| 3 |
Sublimation growth of bulk 3C-SiC using 3C-SiC-on-Si (100) seeding layers Schuh P, Scholer M, Wilhelm M, Syvajarvi M, Litrico G, La Via F, Mauceri M, Wellmann PJ Journal of Crystal Growth, 478, 159, 2017 |
| 4 |
High-quality 6 inch (111) 3C-SiC films grown on off-axis (111) Si substrates Severino A, Bongiorno C, Piluso N, Italia M, Camarda M, Mauceri M, Condorelli G, Di Stefano MA, Cafra B, La Magna A, La Via F Thin Solid Films, 518, S165, 2010 |
| 5 |
4H-SiC epitaxial layer growth by trichlorosilane (TCS) La Via F, Izzo G, Mauceri M, Pistone G, Condorelli G, Perdicaro L, Abbondanza G, Calcagno L, Foti G, Crippa D Journal of Crystal Growth, 311(1), 107, 2008 |
| 6 |
Epitaxial deposition of silicon carbide films in a horizontal hotwall CVD reactor Veneroni A, Omarini F, Masi M, Leone S, Mauceri M, Pistone G, Abbondanza G Materials Science Forum, 483, 57, 2005 |
| 7 |
New achievements on CVD based methods for SIC epitaxial growth Crippa D, Valente GL, Ruggiero A, Neri L, Reitano R, Calcagno L, Foti G, Mauceri M, Leone S, Pistone G, Abbondanza G, Abbagnale G, Veneroni A, Omarini F, Zamolo L, Masi M, Roccaforte F, Giannazzo F, Di Franco S, La Via F Materials Science Forum, 483, 67, 2005 |
| 8 |
Effects of epitaxial layer growth parameters on the defect density and on the electrical characteristics of Schottky diodes La Via F, Roccaforte F, Di Franco S, Ruggiero A, Neri L, Reitano R, Calcagno L, Foti G, Mauceri M, Leone S, Pistone G, Abbondanza G, Abbagnale G, Valente GL, Crippa D Materials Science Forum, 483, 429, 2005 |
| 9 |
Defects in He+ irradiated 6H-SiC probed by DLTS and LTPL measurements Ruggiero A, Libertino S, Mauceri M, Reitano R, Musumeci P, Roccaforte F, La Via F, Calcagno L Materials Science Forum, 457-460, 493, 2004 |
| 10 |
Schottky-Ohmic transition in nickel silicide/SiC-4H system: the effect of non uniform Schottky barrier La Via F, Roccaforte F, Raineri V, Mauceri M, Ruggiero A, Musumeci P, Calcagno L Materials Science Forum, 457-460, 861, 2004 |