검색결과 : 19건
| No. | Article |
|---|---|
| 1 |
Lowering the water saturation level in cemented paste backfill mixtures - Effect on the release of arsenic Hamberg R, Maurice C, Alakangas L Minerals Engineering, 112, 84, 2017 |
| 2 |
Polycrystalline silicon films obtained by crystallization of amorphous silicon on aluminium based substrates for photovoltaic applications Bellanger P, Traore M, Sunil BS, Ulyashin A, Leuvrey C, Maurice C, Roques S, Slaoui A Thin Solid Films, 636, 150, 2017 |
| 3 |
Release of arsenic from cyanidation tailings Hamberg R, Bark G, Maurice C, Alakangas L Minerals Engineering, 93, 57, 2016 |
| 4 |
The use of low binder proportions in cemented paste backfill - Effects on As-leaching Hamberg R, Maurice C, Alakangas L Minerals Engineering, 78, 74, 2015 |
| 5 |
Electron backscatter diffraction characterization of laser-induced periodic surface structures on nickel surface Sedao X, Maurice C, Garrelie F, Colombier JP, Reynaud S, Quey R, Blanc G, Pigeon F Applied Surface Science, 302, 114, 2014 |
| 6 |
Properties of n-type polycrystalline silicon solar cells formed by aluminium induced crystallization and CVD thickening Tuzun O, Qiu Y, Slaoui A, Gordon I, Maurice C, Venkatachalam S, Chatterjee S, Beaucarne G, Poortmans J Solar Energy Materials and Solar Cells, 94(11), 1869, 2010 |
| 7 |
Thin film polycrystalline silicon solar cells on mullite ceramics Focsa A, Gordon I, Auger JM, Slaoui A, Beaucarne G, Poortmans J, Maurice C Renewable Energy, 33(2), 267, 2008 |
| 8 |
EBSD analysis of polysilicon films formed by aluminium induced crystallization of amorphous silicon Tuzun O, Auger JM, Gordon I, Focsa A, Montgomery PC, Maurice C, Slaoui A, Beaucarne G, Poortmans J Thin Solid Films, 516(20), 6882, 2008 |
| 9 |
Growth kinetics and crystallographic properties of polysilicon thin films formed by aluminium-induced crystallization Pihan E, Slaoui A, Maurice C Journal of Crystal Growth, 305(1), 88, 2007 |
| 10 |
The large strain flow stress behaviour of aluminium alloys as measured by channel-die compression (20-500 degrees C) Bacha A, Maurice C, Klocker H, Driver JH Materials Science Forum, 519-521, 783, 2006 |