검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
SILC decay in La2O3 gate dielectrics grown on Ge substrates subjected to constant voltage stress Rahman MS, Evangelou EK, Androulidakis II, Dimoulas A, Mavrou G, Galata S Solid-State Electronics, 54(9), 979, 2010 |
| 2 |
Structural and electrical properties of HfO2/Dy2O3 gate stacks on Ge substrates Evangelou EK, Rahman MS, Androulidakis II, Dimoulas A, Mavrou G, Giannakopoulos KP, Anagnostopoulos DF, Valicu R, Borchert GL Thin Solid Films, 518(14), 3964, 2010 |
| 3 |
Metal-oxide-semiconductor devices on p-type Ge with La2O3 and ZrO2/La2O3 as gate dielectric and the effect of postmetallization anneal Galata SF, Mavrou G, Tsipas P, Sotiropoulos A, Panayiotatos Y, Dimoulas A Journal of Vacuum Science & Technology B, 27(1), 246, 2009 |
| 4 |
Investigation of voltage dependent relaxation, charge trapping, and stress induced leakage current effects in HfO2/Dy2O3 gate stacks grown on Ge (100) substrates Rahman MS, Evangelou EK, Androulidakis II, Dimoulas A, Mavrou G, Tsipas P Journal of Vacuum Science & Technology B, 27(1), 439, 2009 |
| 5 |
Rare earth oxides as high-k dielectrics for Ge based MOS devices: An electrical study of Pt/Gd2O3/Ge capacitors Evangelou EK, Mavrou G, DimoulaS A, Konofaos N Solid-State Electronics, 51(1), 164, 2007 |
| 6 |
Electrical properties of atomic-beam deposited GeO1-xNx/HfO2 gate stacks on Ge Houssa M, Conard T, Bellenger F, Mavrou G, Panayiotatos Y, Sotiropoulos A, Dimoulas A, Meuris M, Caymax M, Heyns MM Journal of the Electrochemical Society, 153(12), G1112, 2006 |