검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
FinFETs using reverse substrate layer with improved gate capacitance characteristics for subthreshold application Wei X, Zhong J, Luo J, Wu H, Zhu HL, Zhao C, Yin HZ Solid-State Electronics, 104, 116, 2015 |
| 2 |
FinFET analogue characterization from DC to 110 GHz Lederer D, Kilchytska V, Rudenko T, Collaert N, Flandre D, Dixit A, De Meyer K, Raskin JP Solid-State Electronics, 49(9), 1488, 2005 |