검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Deposition by radio frequency magnetron sputtering of GaV4S8 thin films for resistive random access memory application Souchier E, Besland MP, Tranchant J, Corraze B, Moreau P, Retoux R, Estournes C, Mazoyer P, Cario L, Janod E Thin Solid Films, 533, 54, 2013 |
| 2 |
Carbon-doped GeTe: A promising material for Phase-Change Memories Beneventi GB, Perniola L, Sousa V, Gourvest E, Maitrejean S, Bastien JC, Bastard A, Hyot B, Fargeix A, Jahan C, Nodin JF, Persico A, Fantini A, Blachier D, Toffoli A, Loubriat S, Roule A, Lhostis S, Feldis H, Reimbold G, Billon T, De Salvo B, Larcher L, Pavan P, Bensahel D, Mazoyer P, Annunziata R, Zuliani P, Boulanger F Solid-State Electronics, 65-66, 197, 2011 |
| 3 |
Thin film embedded memory solutions Mazoyer P, Puget S, Bossu G, Masson P, Lorenzini P, Portal JM Current Applied Physics, 10(1), E9, 2010 |
| 4 |
Role of chelating agent on the oxidic state of hydrotreating catalysts Mazoyer P, Geantet C, Diehl F, Loridant S, Lacroix A Catalysis Today, 130(1), 75, 2008 |
| 5 |
Papers Selected From The IST International Conference On Memory Technology And Design - ICMTD'05 Introduction Gerritsen E, Masson P, Mazoyer P Solid-State Electronics, 49(11), 1713, 2005 |
| 6 |
Modelling of the 1T-Bulk capacitor-less DRAM cell with improved performances: The way to scaling Ranica R, Villaret A, Malinge P, Candelier P, Masson P, Bouchakour R, Mazoyer P, Skotnicki T Solid-State Electronics, 49(11), 1759, 2005 |
| 7 |
Evolution of materials technology for stacked-capacitors in 65 nm embedded-DRAM Gerritsen E, Emonet N, Caillat C, Jourdan N, Piazza M, Fraboulet D, Boeck B, Berthelot A, Smith S, Mazoyer P Solid-State Electronics, 49(11), 1767, 2005 |
| 8 |
Emerging silicon-on-nothing (SON) devices technology Monfray S, Skotnicki T, Fenouillet-Beranger C, Carriere N, Chanemougame D, Morand Y, Descombes S, Talbot A, Dutartre D, Jenny C, Mazoyer P, Palla R, Leverd F, Le Friec Y, Pantel R, Borel S, Louis D, Buffet N Solid-State Electronics, 48(6), 887, 2004 |