화학공학소재연구정보센터
검색결과 : 6건
No. Article
1 Characterization of ultrashallow dopant profiles using spreading resistance profiling
Tan LS, Tan LCP, Leong MS, Mazur RG, Ye CW
Journal of Vacuum Science & Technology B, 20(1), 483, 2002
2 Product wafer monitoring of ultrashallow channel implants with an elastic metal gate
Hillard RJ, Howland WH, Mazur RG, Ye W, Variam NK
Journal of Vacuum Science & Technology B, 20(1), 488, 2002
3 High-resolution damage depth profiles of unannealed sub-100 nm B+ implants in (100) silicon
Hartford CL, Hillard RJ, Mazur RG, Foad MA
Journal of Vacuum Science & Technology B, 16(1), 316, 1998
4 Profiling of Silicide Silicon Structures Using a Combination of the Spreading Resistance and Point-Contact Current-Voltage Methods
Heddleson JM, Weinzierl SR, Hillard RJ, Raichoudhury P, Mazur RG
Journal of Vacuum Science & Technology B, 12(1), 317, 1994
5 Detection of Anomalous Defect-Enhanced Diffusion Using Advanced Spreading Resistance Measurements and Analysis
Weinzierl SR, Hillard RJ, Heddleson JM, Raichoudhury P, Mazur RG, Osburn CM
Journal of Vacuum Science & Technology B, 12(1), 322, 1994
6 Accurate Profiling of Ultra-Shallow Implants with Mercury Gate Metal-Oxide-Semiconductor Capacitance-Voltage
Ledudal R, Hillard RJ, Heddleson JM, Weinzierl SR, Raichoudhury P, Mazur RG
Journal of Vacuum Science & Technology B, 12(1), 336, 1994