검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Low dislocation density GaN growth on high-temperature AlN buffer layers on (0001) sapphire Kappers MJ, Moram MA, Rao DVS, McAleese C, Humphreys CJ Journal of Crystal Growth, 312(3), 363, 2010 |
| 2 |
The role of strain in controlling the surface morphology of AlxGa1-xN following in situ treatment with SiH4 and NH3 Ketteniss N, Oliver RA, McAleese C, Kappers MJ, Zhang Y, Humphreys CJ Applied Surface Science, 254(7), 2124, 2008 |
| 3 |
Properties of non-polar a-plane GaN/AlGaN quantum wells Kappers MJ, Hollander JL, Johnston CF, McAleese C, Rao DVS, Sanchez AM, Humphreys CJ, Badcock TJ, Dawson P Journal of Crystal Growth, 310(23), 4983, 2008 |
| 4 |
Compositional contrast in AlxGa1-xN/GaN heterostructures using scanning spreading resistance microscopy Fraser IS, Oliver RA, Sumner J, McAleese C, Kappers MJ, Humphreys CJ Applied Surface Science, 253(8), 3937, 2007 |
| 5 |
Optical and micro-structural properties of high photoluminescence efficiency InGaN/AlInGaN quantum well structures Zhu D, Kappers MJ, McAleese C, Graham DM, Chabrol GR, Hylton NP, Dawson P, Thrush EJ, Humphreys CJ Journal of Crystal Growth, 298, 504, 2007 |
| 6 |
Growth and characterisation of semi-polar (11(2)over-bar-2) InGaN/GaN MQW structures Kappers MJ, Hollander JL, McAleese C, Johnston CF, Broom RF, Barnard JS, Vickers ME, Humphreys CJ Journal of Crystal Growth, 300(1), 155, 2007 |
| 7 |
Strain effects of AIN interlayers for MOVPE growth of crack-free AlGaN and AIN/GaN multilayers on GaN McAleese C, Kappers MJ, Rayment FDG, Cherns P, Humphreys CJ Journal of Crystal Growth, 272(1-4), 475, 2004 |