화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 Al2O3/Si0.7Ge0.3(001) & HfO2/Si(0.7)Ge0.3(001) interface trap state reduction via in-situ N-2/H-2 RF downstream plasma passivation
Breeden M, Wolf S, Ueda S, Fang ZW, Chang CY, Tang KC, McIntyre P, Kummel AC
Applied Surface Science, 478, 1065, 2019
2 Low temperature, high pressure thermo-physical and crystallographic properties of KZnF3 perovskite
Knight KS, Bull CL, McIntyre P
Materials Chemistry and Physics, 199, 393, 2017
3 Sulfur passivation for the formation of Si-terminated Al2O3/SiGe(001) interfaces
Sardashti K, Hu KT, Tang KC, Park S, Kim H, Madisetti S, McIntyre P, Oktyabrsky S, Siddiqui S, Sahu B, Yoshida N, Kachian J, Kummel A
Applied Surface Science, 366, 455, 2016
4 X-ray Crystal Structure of rac-[Ru(phen)(2)dppz](2+) with d(ATGCAT)(2) Shows Enantiomer Orientations and Water Ordering
Hall JP, Cook D, Morte SR, McIntyre P, Buchner K, Beer H, Cardin DJ, Brazier JA, Winter G, Kelly JM, Cardin CJ
Journal of the American Chemical Society, 135(34), 12652, 2013
5 High-kappa dielectrics for advanced carbon-nanotube transistors and logic gates
Javey A, Kim H, Brink M, Wang Q, Ural A, Guo J, McIntyre P, McEuen P, Lundstrom M, Dai HJ
Nature Materials, 1(4), 241, 2002