검색결과 : 5건
No. | Article |
---|---|
1 |
Al2O3/Si0.7Ge0.3(001) & HfO2/Si(0.7)Ge0.3(001) interface trap state reduction via in-situ N-2/H-2 RF downstream plasma passivation Breeden M, Wolf S, Ueda S, Fang ZW, Chang CY, Tang KC, McIntyre P, Kummel AC Applied Surface Science, 478, 1065, 2019 |
2 |
Low temperature, high pressure thermo-physical and crystallographic properties of KZnF3 perovskite Knight KS, Bull CL, McIntyre P Materials Chemistry and Physics, 199, 393, 2017 |
3 |
Sulfur passivation for the formation of Si-terminated Al2O3/SiGe(001) interfaces Sardashti K, Hu KT, Tang KC, Park S, Kim H, Madisetti S, McIntyre P, Oktyabrsky S, Siddiqui S, Sahu B, Yoshida N, Kachian J, Kummel A Applied Surface Science, 366, 455, 2016 |
4 |
X-ray Crystal Structure of rac-[Ru(phen)(2)dppz](2+) with d(ATGCAT)(2) Shows Enantiomer Orientations and Water Ordering Hall JP, Cook D, Morte SR, McIntyre P, Buchner K, Beer H, Cardin DJ, Brazier JA, Winter G, Kelly JM, Cardin CJ Journal of the American Chemical Society, 135(34), 12652, 2013 |
5 |
High-kappa dielectrics for advanced carbon-nanotube transistors and logic gates Javey A, Kim H, Brink M, Wang Q, Ural A, Guo J, McIntyre P, McEuen P, Lundstrom M, Dai HJ Nature Materials, 1(4), 241, 2002 |