화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Mobility in 6H-SiC n-channel MOSFETs
Scozzie CJ, Lelis AJ, McLean FB
Materials Science Forum, 338-3, 1121, 2000
2 Comparison of high-temperature electrical characterizations of pulsed-laser deposited AlN on 6H- and 4H-SiC from 25 to 450 degrees C
Lelis AJ, Scozzie CJ, McLean FB, Geil BR, Vispute RD, Venkatesan T
Materials Science Forum, 338-3, 1137, 2000
3 Pulsed laser deposition: A novel growth technique for wide-bandgap semiconductor research
Vispute RD, Enck R, Patel A, Ming B, Sharma RP, Venkatesan T, Scozzie CJ, Lelis A, McLean FB, Zheleva T, Jones KA
Materials Science Forum, 338-3, 1503, 2000