검색결과 : 3건
No. | Article |
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1 |
Low damage fully self-aligned replacement gate process for fabricating deep sub-100 nm gate length GaAs metal-oxide-semiconductor field-effect transistors Li X, Bentley S, McLelland H, Holland MC, Zhou H, Thoms S, Macintyre DS, Thayne IG Journal of Vacuum Science & Technology B, 28(6), C6L1, 2010 |
2 |
50 nm metamorphic GaAs and InPHEMTs Thayne I, Elgaid K, Moran D, Cao X, Boyd E, McLelland H, Holland M, Thoms S, Stanley C Thin Solid Films, 515(10), 4373, 2007 |
3 |
Fabrication of ultrashort T gates using a PMMA/LOR/UVIII resist stack Chen Y, Macintyre DS, Cao X, Boyd E, Moran D, McLelland H, Holland M, Stanley CR, Thayne I, Thoms S Journal of Vacuum Science & Technology B, 21(6), 3012, 2003 |