화학공학소재연구정보센터
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No. Article
1 Low damage fully self-aligned replacement gate process for fabricating deep sub-100 nm gate length GaAs metal-oxide-semiconductor field-effect transistors
Li X, Bentley S, McLelland H, Holland MC, Zhou H, Thoms S, Macintyre DS, Thayne IG
Journal of Vacuum Science & Technology B, 28(6), C6L1, 2010
2 50 nm metamorphic GaAs and InPHEMTs
Thayne I, Elgaid K, Moran D, Cao X, Boyd E, McLelland H, Holland M, Thoms S, Stanley C
Thin Solid Films, 515(10), 4373, 2007
3 Fabrication of ultrashort T gates using a PMMA/LOR/UVIII resist stack
Chen Y, Macintyre DS, Cao X, Boyd E, Moran D, McLelland H, Holland M, Stanley CR, Thayne I, Thoms S
Journal of Vacuum Science & Technology B, 21(6), 3012, 2003