검색결과 : 19건
| No. | Article |
|---|---|
| 1 |
Demonstration of IMPATT diode oscillators in 4H-SiC Yuan L, Cooper JA, Webb KJ, Melloch MR Materials Science Forum, 389-3, 1359, 2002 |
| 2 |
Formation of low resistivity ohmic contacts to n-type 3C-SiC Wan JW, Capano MA, Melloch MR Solid-State Electronics, 46(8), 1227, 2002 |
| 3 |
Influence of the AlN buffer layer growth on AlGaN/GaN films deposited on (111)Si substrates Liaw HM, Venugopal R, Wan J, Melloch MR Solid-State Electronics, 45(3), 417, 2001 |
| 4 |
Epitaxial GaN films grown on Si(111) with varied buffer layers Liaw HM, Venugopal R, Wan J, Melloch MR Solid-State Electronics, 45(7), 1173, 2001 |
| 5 |
Ionization energies and electron mobilities in phosphorus- and nitrogen-implanted 4H-silicon carbide Capano MA, Cooper JA, Melloch MR, Saxler A, Mitchel WC Materials Science Forum, 338-3, 703, 2000 |
| 6 |
Crack-free, single-crystal GaN grown on 100 mm diameter silicon Liaw HM, Venugopal R, Wan J, Doyle R, Fejes P, Loboda MJ, Melloch MR Materials Science Forum, 338-3, 1463, 2000 |
| 7 |
GaN epilayers grown on 100 mm diameter Si(111) substrates Liaw HM, Venugopal R, Wan J, Doyle R, Fejes PL, Melloch MR Solid-State Electronics, 44(4), 685, 2000 |
| 8 |
Nanoelectronic device applications of a chemically stable GaAs structure Janes DB, Kolagunta VR, Batistuta M, Walsh BL, Andres RP, Liu J, Dicke J, Lauterbach J, Pletcher T, Chen EH, Melloch MR, Peckham EL, Ueng HJ, Woodall JM, Lee T, Reifenberger R, Kubiak CP, Kasibhatla B Journal of Vacuum Science & Technology B, 17(4), 1773, 1999 |
| 9 |
Subsurface charge accumulation imaging of a quantum Hall liquid Tessmer SH, Glicofridis PI, Ashoori RC, Levitov LS, Melloch MR Nature, 392(6671), 51, 1998 |
| 10 |
Fabrication and transport study of finite lateral superlattices Hannan M, Grundbacher R, Fay P, Adesida I, Giannetta RW, Wagner CJ, Melloch MR Journal of Vacuum Science & Technology B, 15(6), 2821, 1997 |