검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Stability of the platinum electrode during high temperature annealing Golosov DA, Okojie JE, Zavadski SM, Rudenkov AS, Melnikov SN, Kolos VV Thin Solid Films, 661, 53, 2018 |
| 2 |
A high speed asymmetric T-shape cell in NMOS-selected phase change memory chip Wang JH, Zhou J, Zhou WL, Tong H, Huang DQ, Sun JJ, Zhang L, Long XM, Chen Y, Qu LW, Miao XS Solid-State Electronics, 81, 157, 2013 |
| 3 |
Multiple gate NVM cells with improved Fowler-Nordheim tunneling program and erase performances Gerardi C, Tripiciano E, Cina G, Lombardo S, Garozzo C, Corso D, Betro G, Pace C, Crupi F Solid-State Electronics, 54(11), 1319, 2010 |
| 4 |
Robust memory cell cylinder capacitor with cross double patterning technology Kim SG, Kim CB Solid-State Electronics, 54(12), 1675, 2010 |
| 5 |
The role of as-grown defects and electrode materials on polarization orientation of Pb(Zr0.52Ti0.48)O-3 on YBa2Cu3O7-x Zomorrodian AR, Wu NJ, Lin H, Ignatiev A Thin Solid Films, 335(1-2), 225, 1998 |