| 1 |
Memristive effect with non-zero-crossing current-voltage hysteresis behavior based on Ag doped Lophatherum gracile Brongn
Xu YJ, Tan L, Sun B, Lei M, Zhao YL, Li TT, Zheng L, Zhu SH, Zhang Y, Zhao Y
Current Applied Physics, 20(4), 545, 2020 |
| 2 |
Finite-time synchronisation and passivity of coupled memristive neural networks
Huang YL, Qiu SH, Ren SY
International Journal of Control, 93(12), 2824, 2020 |
| 3 |
Tuning oxygen vacancy in LiNbO3 single crystals for prominent memristive and dielectric behaviors
Wang CC, Sun J, Ni W, Yue BB, Hong F, Liu H, Cheng ZX
Journal of the American Ceramic Society, 102(11), 6705, 2019 |
| 4 |
Effect of a PEDOT:PSS modified layer on the electrical characteristics of flexible memristive devices based on graphene oxide: polyvinylpyrrolidone nanocomposites
Kim WK, Wu C, Kim TW
Applied Surface Science, 444, 65, 2018 |
| 5 |
Chemical sensors are hybrid-input memristors
Sysoev VI, Arkhipov VE, Okotrub AV, Pershin YV
Applied Surface Science, 436, 1018, 2018 |
| 6 |
Exponential stabilisation of memristive neural networks under intermittent output feedback control
Li XF, Fang JA, Li HY
International Journal of Control, 91(8), 1848, 2018 |
| 7 |
Resistive switching and impedance characteristics of M/TiO2-x/TiO2/M nano-ionic memristor
Dash CS, Sahoo S, Prabaharan SRS
Solid State Ionics, 324, 218, 2018 |
| 8 |
Analog and digital Reset processes observed in Pt/CuO/Pt memristive devices
Lv FC, Yang R, Guo X
Solid State Ionics, 303, 161, 2017 |
| 9 |
Stacked resistive switches for AND/OR logic gates
Kim MJ, Son KR, Park JH, Kim TG
Solid-State Electronics, 132, 45, 2017 |
| 10 |
BaTiO3 thin films on platinized silicon: Growth, characterization and resistive memory behavior
Roman A, Rengifo M, Medina LMS, Reinoso M, Negri RM, Steren LB, Rubi D
Thin Solid Films, 628, 208, 2017 |
