화학공학소재연구정보센터
검색결과 : 13건
No. Article
1 A Facile Solution-Doping Method to Improve a LowTemperature Zinc Oxide Precursor: Towards Low-Cost Electronics on Plastic Foil
Weber D, Botnaras S, Pham DV, Merkulov A, Steiger J, Schmechel R, De Cola L
Advanced Functional Materials, 24(17), 2537, 2014
2 Advanced secondary ion mass spectroscopy quantification in the first few nanometer of B, P, and As ultrashallow implants
Merkulov A, Peres P, Choi S, Horreard F, Ehrke HU, Loibl N, Schuhmacher M
Journal of Vacuum Science & Technology B, 28(1), C1C48, 2010
3 High-quality ZnS shells for CdSe nanoparticles: Rapid microwave synthesis
Ziegler J, Merkulov A, Grabolle M, Resch-Genger U, Nann T
Langmuir, 23(14), 7751, 2007
4 Growth of new nonlinear crystals LiMX2 (M = Al, In, Ga; X = S, Se, Te) for the mid-IR optics
Isaenko L, Vasilyeva I, Merkulov A, Yelisseyev A, Lobanov S
Journal of Crystal Growth, 275(1-2), 217, 2005
5 CsLiB6O10 crystals with Cs deficit: structure and properties
Isaenko L, Vasilyeva I, Merkulov A, Tomilenko A, Bogdanova I, Malakhov V, Drebushchak V
Journal of Crystal Growth, 282(3-4), 407, 2005
6 Toward accurate in-depth profiling of As and P ultra-shallow implants by SIMS
Merkulov A, de Chambost E, Schuhmacher M, Peres P
Applied Surface Science, 231-2, 640, 2004
7 Evaluation of BN-delta-doped multilayer reference materials for shallow depth profiling in SIMS: round-robin test
Toujou F, Yoshikawa S, Homma Y, Takano A, Takenaka H, Tomita M, Li Z, Hasegawa T, Sasakawa K, Schuhmacher M, Merkulov A, Kim HK, Moon DW, Hong T, Won JY
Applied Surface Science, 231-2, 649, 2004
8 Latest developments for the CAMECA ULE-SIMS instruments: IMS Wf and SC-Ultra
de Chambost E, Merkulov A, Peres P, Rasser B, Schuhmacher M
Applied Surface Science, 231-2, 949, 2004
9 Accurate on-line depth calibration with a laser interferometer during SIMS profiling on the Cameca IMS WF instrument
Merkulov A, Merkulova O, de Chambost E, Schuhmacher M
Applied Surface Science, 231-2, 954, 2004
10 Accurate in depth profiling of As and P shallow implants by secondary ion mass spectroscopy
de Chambost E, Merkulov A, Schuhmacher M, Peres P
Journal of Vacuum Science & Technology B, 22(1), 341, 2004