검색결과 : 10건
| No. | Article |
|---|---|
| 1 |
Analysis of multilayered, nitrogen-doped aluminum oxide and hafnium oxide dielectric films for wide-temperature capacitor applications DeCerbo JN, Bray KR, Merrett JN Thin Solid Films, 590, 71, 2015 |
| 2 |
Gamma and Proton Irradiation Effects on 4H-SiC Depletion-Mode Trench JFETs Merrett JN, Williams JR, Cressler JD, Sutton A, Cheng L, Bondarenko V, Sankin I, Seale D, Mazzola MS, Krishnan B, Koshka Y, Casady JB Materials Science Forum, 483, 885, 2005 |
| 3 |
Investigation of two-stage activation annealing of Al-implanted 4H-SiC layers Merrett JN, Scofield JD, Tsao BH, Mazzola M, Seale D, Draper WA, Sankin I, Casady JB, Bondarenko V Materials Science Forum, 457-460, 921, 2004 |
| 4 |
Design and implementation of the optimized edge termination in 1.8 W4H-SiC PiN diodes Sankin I, Draper WA, Merrett JN, Casady JRB, Casady JB Materials Science Forum, 457-460, 1101, 2004 |
| 5 |
A review of SiC power switch: achievements, difficulties and perspectives Sankin I, Merrett JN, Draper WA, Casady JRB, Casady JB Materials Science Forum, 457-460, 1249, 2004 |
| 6 |
Fabrication and simulation of 4H-SiC PiN diodes having mesa guard ring edge termination Sankin I, Dufrene JB, Merrett JN, Casady JB Materials Science Forum, 433-4, 879, 2002 |
| 7 |
A novel technique for shallow angle beveling of SiC to prevent surface breakdown in power devices Merrett JN, Sheridan DC, Williams Jr, Tin CC, Cressler JD Materials Science Forum, 353-356, 623, 2001 |
| 8 |
Design and characterization of 2.5kV 4H-SiC JBS rectifiers with self-aligned guard ring termination Sheridan DC, Merrett JN, Cressler JD, Saddow SE, Williams Jr, Ellis CE, Niu G Materials Science Forum, 353-356, 687, 2001 |
| 9 |
Simulation and fabrication of high-voltage 4H-SiC diodes with multiple floating guard ring termination Sheridan DC, Niu G, Merrett JN, Cressler JD, Ellis C, Tin CC, Siergiej RR Materials Science Forum, 338-3, 1339, 2000 |
| 10 |
Design and fabrication of planar guard ring termination for high-voltage SiC diodes Sheridan DC, Niu GF, Merrett JN, Cressler JD, Ellis C, Tin CC Solid-State Electronics, 44(8), 1367, 2000 |