| 1 |
Leakage current suppression with a combination of planarized gate and overlap/off-set structure in metal-induced laterally crystallized polycrystalline-silicon thin-film transistors
Chae HJ, Seok KH, Lee SK, Joo SK
Solid-State Electronics, 142, 20, 2018 |
| 2 |
Enhanced Au induced lateral crystallization in electron-irradiated amorphous Ge on SiO2
Sakiyama S, Kaneko T, Ootsubo T, Sakai T, Nakashima K, Moto K, Yoneoka M, Takakura K, Tsunoda I
Thin Solid Films, 557, 151, 2014 |
| 3 |
Polycrystalline silicon thin-film transistor utilizing self-assembled monolayer for crystallization
Tojo Y, Miura A, Ishikawa Y, Yamashita I, Uraoka Y
Thin Solid Films, 540, 266, 2013 |
| 4 |
Effect of MSi2/Si(111) (M = Co, Ni) interface structure on metal induced lateral crystallization
Ahn JS, Yoon YG, Kim DK, Joo SK
Thin Solid Films, 542, 426, 2013 |
| 5 |
Enhanced performance and reliability of NILC-TFTs using FSG buffer layer
Chen CC, Wu YS, Chang CP
Materials Chemistry and Physics, 132(2-3), 637, 2012 |
| 6 |
Characterizations of polycrystalline silicon nanowire thin-film transistors enhanced by metal-induced lateral crystallization
Su CJ, Huang YF, Lin HC, Huang TY
Solid-State Electronics, 77, 20, 2012 |
| 7 |
Effect of compressive stress on nickel-induced lateral crystallization of amorphous silicon thin films
Huang SY, Lin HL, Chao CG, Liu TF
Thin Solid Films, 520(7), 2984, 2012 |
| 8 |
Low temperature crystallization of a-Si thin film by nickel MOCVD
Lee SJ, Yun SJ, Son SW, Byun CW, Joo SK
Current Applied Physics, 11(4), S151, 2011 |
| 9 |
Effect of Ni residues on the performance and the uniformity of nickel-induced lateral crystallization polycrystalline silicon nanowire thin-film transistors
Wang BM, Yang TM, Wu YS, Su CJ, Lin HC
Materials Chemistry and Physics, 124(1), 880, 2010 |
| 10 |
Low-temperature solid-phase crystallization of amorphous SiGe films on glass by imprint technique
Toko K, Kanno H, Kenjo A, Sadoh T, Asano T, Miyao M
Solid-State Electronics, 52(8), 1221, 2008 |
