검색결과 : 78건
| No. | Article |
|---|---|
| 1 |
An accurate expression to estimate the metal gate granularity induced threshold voltage variability in NWFETs Vardhan PH, Ganguly S, Ganguly U Solid-State Electronics, 152, 65, 2019 |
| 2 |
Interface state degradation during AC positive bias temperature instability stress Kang SC, Kim SM, Jung U, Kim Y, Park W, Lee BH Solid-State Electronics, 158, 46, 2019 |
| 3 |
Analytical modeling of metal gate granularity based threshold voltage variability in NWFET Vardhan PH, Mittal S, Ganguly S, Ganguly U Solid-State Electronics, 147, 26, 2018 |
| 4 |
Process modules for GeSn nanoelectronics with high Sn-contents Schulte-Braucks C, Glass S, Hofmann E, Stange D, von den Driesch N, Hartmann JM, Ikonic Z, Zhao QT, Buca D, Mantl S Solid-State Electronics, 128, 54, 2017 |
| 5 |
Two methods of tuning threshold voltage of bulk FinFETs with replacement high-k metal-gate stacks Xu M, Zhu HL, Zhang YB, Xu QX, Zhang YK, Qin CL, Zhang QZ, Yin HX, Xu H, Chen S, Luo J, Li CL, Zhao C, Ye TC Solid-State Electronics, 129, 52, 2017 |
| 6 |
Investigation of low-frequency noise of 28-nm technology process of high-k/metal gate p-MOSFETs with fluorine incorporation Kao TH, Chang SJ, Fang YK, Huang PC, Wang BC, Wu CY, Wu SL Solid-State Electronics, 115, 7, 2016 |
| 7 |
Attainment of dual-band edge work function by using a single metal gate and single high-k dielectric via ion implantation for HP CMOS device Xu QX, Xu G, Zhou H, Zhu H, Liu J, Wang Y, Li J, Xiang J, Liang Q, Wu H, Zhong J, Xu M, Xu W, Ma X, Wang X, Tong X, Chen D, Yan J, Zhao C, Ye T Solid-State Electronics, 115, 26, 2016 |
| 8 |
Investigation of thermal atomic layer deposited TiAlX (X = N or C) film as metal gate Xiang JJ, Zhang YB, Li TT, Wang XL, Gao JF, Yin HX, Li JF, Wang WW, Ding YQ, Xu CY, Zhao C Solid-State Electronics, 122, 64, 2016 |
| 9 |
Characteristics of metal-gate metal-insulator-semiconductor capacitor with ZrN capping layer fabricated by high-power impulse magnetron sputtering Tsai JR, Juan PC, Chen PJ Thin Solid Films, 618, 55, 2016 |
| 10 |
Impact of post-metal deposition annealing temperature on performance and reliability of high-K metal-gate n-FinFETs Lin CY, Chang TC, Liu KJ, Tsai JY, Chen CE, Liu HW, Lu YH, Tseng TY, Cheng O, Huang CT Thin Solid Films, 620, 30, 2016 |