| 1 |
TDPAC and first-principles study of electronic and structural properties of a Pd-vacancy complex in undoped germanium
Abiona AA, Kemp W, Timmers H
Current Applied Physics, 15(3), 319, 2015 |
| 2 |
Effect of nickel concentration on source/drain series resistance and channel resistance of Ni-metal-induced crystallization thin-film transistors
Lai MH, Wu YS, Huang JJ
Thin Solid Films, 544, 500, 2013 |
| 3 |
Low temperature crystallization of a-Si thin film by nickel MOCVD
Lee SJ, Yun SJ, Son SW, Byun CW, Joo SK
Current Applied Physics, 11(4), S151, 2011 |
| 4 |
Strained single-crystal GOI (Ge on Insulator) arrays by rapid-melting growth from Si (111) micro-seeds
Sakane T, Toko K, Tanaka T, Sadoh T, Miyao M
Solid-State Electronics, 60(1), 22, 2011 |
| 5 |
Reduced leakage current of nickel induced crystallization poly-Si TFTs by a simple chemical oxide layer
Lai MH, Wu YS
Solid-State Electronics, 64(1), 6, 2011 |
| 6 |
Raman scattering analysis of the residual stress in metal-induced crystallized amorphous silicon thin films using nickel
Nguyen TN, Nguyen VD, Jung S, Yi J
Applied Surface Science, 255(19), 8252, 2009 |
| 7 |
Electroless deposition of nickel-phosphorous nano-dots for low-temperature crystallization of amorphous silicon
Liu YM, Sung Y, Pu NW, Chou YH, Yeh KC, Ger MD
Thin Solid Films, 517(2), 727, 2008 |
