검색결과 : 68건
| No. | Article |
|---|---|
| 1 |
Nonpolar m-plane AlxGa1-xN layers grown on m-plane sapphire by MOVPE Dinh DV, Amano H, Pristovsek M Journal of Crystal Growth, 512, 100, 2019 |
| 2 |
Vanishing biexciton binding energy from stacked, MOVPE grown, site-controlled pyramidal quantum dots for twin photon generation Moroni ST, Varo S, Juska G, Chung TH, Gocalinska A, Pelucchi E Journal of Crystal Growth, 506, 36, 2019 |
| 3 |
Control growth orientation of semipolar GaN layers grown on 3C-SiC/(001) Si Dinh DV, Parbrook PJ Journal of Crystal Growth, 501, 34, 2018 |
| 4 |
Critical V/III dependence of formation of high density GaSb/GaAs quantum dots grown by AP-MOVPE Tile N, Ahia CC, Botha JR Journal of Crystal Growth, 500, 28, 2018 |
| 5 |
Influence of hydrogen pre-growth flow on indium incorporation into InGaN layers Czernecki R, Grzanka E, Strak P, Targowski G, Krukowski S, Perlin P, Suski T, Leszczynski M Journal of Crystal Growth, 464, 123, 2017 |
| 6 |
In-situ passivation of quaternary barrier InAlGaN/GaN HEMTs Gamarra P, Lacam C, Tordjman M, Medjdoub F, di Forte-Poisson MA Journal of Crystal Growth, 464, 143, 2017 |
| 7 |
Exploiting strain to enhance the Si incorporation in GaAs-based III/V semiconductors using MOVPE Nattermann L, Ludewig P, Sterzer E, Volz K Journal of Crystal Growth, 470, 15, 2017 |
| 8 |
MOVPE growth of violet GaN LEDs on beta-Ga2O3 substrates Li D, Hoffmann V, Richter E, Tessaro T, Galazka Z, Weyers M, Trankle G Journal of Crystal Growth, 478, 212, 2017 |
| 9 |
Effect of V/III ratio on the growth of (11(2)over-bar2) AlGaN by metalorganic vapour phase epitaxy Dinh DV, Alam SN, Parbrook PJ Journal of Crystal Growth, 435, 12, 2016 |
| 10 |
Silicon doping of semipolar (11(2)over-bar2) AlxGa1-xN (0.50 <= x <= 0.55) Dinh DV, Pampili P, Parbrook PJ Journal of Crystal Growth, 451, 181, 2016 |