검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
SiGe:C HBT transit time analysis based on hydrodynamic modeling using doping, composition and strained dependent SiGe:C carriers mobility and relaxation time Ramirez-Garcia E, Michaillat M, Aniel F, Zerounian N, Enciso-Aguilar M, Rideau D Solid-State Electronics, 61(1), 58, 2011 |
| 2 |
Full-Band Monte Carlo investigation of hole mobilities in SiGe, SiC and SiGeC alloys Michaillat M, Rideau D, Aniel F, Tavernier C, Jaouen H Thin Solid Films, 518(9), 2437, 2010 |
| 3 |
On the validity of the effective mass approximation and the Luttinger k.p model in fully depleted SOI MOSFETs Rideau D, Feraille M, Michaillat M, Niquet YM, Tavernier C, Jaouen H Solid-State Electronics, 53(4), 452, 2009 |