검색결과 : 40건
| No. | Article |
|---|---|
| 1 |
Interface modification in type-II ZnCdSe/Zn(Cd)Te QDs for high efficiency intermediate band solar cells Deligiannakis V, Dhomkar S, Claro MS, Kuskovsky IL, Tamargo MC Journal of Crystal Growth, 512, 203, 2019 |
| 2 |
Growth of AlGaN alloys under excess group III conditions: Formation of vertical nanorods Singha C, Sen S, Pramanik P, Palit M, Das A, Roy AS, Sen S, Bhattacharyya A Journal of Crystal Growth, 481, 40, 2018 |
| 3 |
Epitaxial CuInSe2 thin films grown by molecular beam epitaxy and migration enhanced epitaxy Abderrafi K, Ribeiro-Andrade R, Nicoara N, Cerqueira MF, Debs MG, Limborco H, Salome PMP, Gonzalez JC, Briones F, Garcia JM, Sadewasser S Journal of Crystal Growth, 475, 300, 2017 |
| 4 |
Behavior of Ga atoms deposited on GaAs (111)B and (111)A surfaces Kawaharazuka A, Horikoshi Y Journal of Crystal Growth, 477, 25, 2017 |
| 5 |
Measurement and control of size and density of type-II ZnTe/ZnSe submonolayer quantum dots grown by migration enhanced epitaxy Dhomkar S, Ji H, Roy B, Deligiannakis V, Wang A, Tamargo MC, Kuskovsky IL Journal of Crystal Growth, 422, 8, 2015 |
| 6 |
Interface layer control and optimization of InAs/GaSb type-II superlattices grown by molecular beam epitaxy Xu ZC, Chen JX, Wang FF, Zhou Y, Jin C, He L Journal of Crystal Growth, 386, 220, 2014 |
| 7 |
Novel activation process for Mg-implanted GaN Hashimoto S, Nakamura T, Honda Y, Amano H Journal of Crystal Growth, 388, 112, 2014 |
| 8 |
Crystalline and electrical characteristics of C-60 uniformly doped GaAs layers Nishinaga J, Horikoshi Y Journal of Crystal Growth, 378, 81, 2013 |
| 9 |
Characteristics of CuGaSe2 layers grown on GaAs substrates Fujita M, Kawaharazuka A, Horikoshi Y Journal of Crystal Growth, 378, 154, 2013 |
| 10 |
Control of threading dislocation density at the initial growth stage of AlN on c-sapphire in plasma-assisted MBE Nechaev DV, Aseev PA, Jmerik VN, Brunkov PN, Kuznetsova YV, Sitnikova AA, Ratnikov VV, Ivanov SV Journal of Crystal Growth, 378, 319, 2013 |