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| No. | Article |
|---|---|
| 1 |
Effect of additional hydrochloric acid flow on the growth of non-polar a-plane GaN layers on r-plane sapphire by hydride vapor-phase epitaxy Lee M, Mikulik D, Park S, Im K, Cho SH, Ko D, Kim UJ, Hwang S, Yoon E Journal of Crystal Growth, 404, 199, 2014 |