검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Monoclinic textured HfO2 films on GeOxNy/Ge(100) stacks using interface reconstruction by controlled thermal processing Bastos KP, Miotti L, Lucovsky G, Chung KB, Nordlund D Journal of Vacuum Science & Technology A, 28(4), 662, 2010 |
| 2 |
Ge doped HfO2 thin films investigated by x-ray absorption spectroscopy Miotti L, Bastos KP, Lucovsky G, Radtke C, Nordlund D Journal of Vacuum Science & Technology A, 28(4), 693, 2010 |
| 3 |
Deuterium Trapping at the Pt/HfO2 Interface Driemeier C, Kanter MM, Miotti L, Soares GV, Baumvol IJR Electrochemical and Solid State Letters, 12(4), G9, 2009 |
| 4 |
Comparisons between intrinsic bonding defects in d(0) transition metal oxide such as HfO2, and impurity atom defects in d(0) complex oxides such as GdScO3 Lucovsky G, Chung KB, Miotti L, Bastos KP, Amado C, Schlom D Solid-State Electronics, 53(12), 1273, 2009 |
| 5 |
Electrical properties and interfacial characteristics of RuO2/HfAlOx/SiON/Si and RuO2/LaAlO3/SiON/Si capacitors Edon V, Li Z, Hugon MC, Krug C, Bastos KP, Miotti L, Baumvol IJR, Cardinaud C, Durand O, Eypert C Journal of the Electrochemical Society, 155(9), H661, 2008 |
| 6 |
Atomic transport in LaAlO3 films on Si induced by thermal annealing Miotti L, Driemeier C, Tatsch F, Radtke C, Edon V, Hugon MC, Voldoire O, Agius B, Baumvol IJR Electrochemical and Solid State Letters, 9(6), F49, 2006 |
| 7 |
Thermal stability and electrical characterization of HfO2 films on thermally nitrided Si Bastos KP, Morais J, Miotti L, Soares GV, Pezzi RP, da Silva RCG, Boudinov H, Baumvol IJR, Hegde RI, Tseng HH, Tobinc PJ Journal of the Electrochemical Society, 151(6), F153, 2004 |
| 8 |
Thermal behavior of hafnium-based ultrathin films on silicon Pezzi RP, Morais J, Dahmen SR, Bastos KP, Miotti L, Soares GV, Baumvol IJR, Freire FL Journal of Vacuum Science & Technology A, 21(4), 1424, 2003 |
| 9 |
Annealing of ZrAlxOy ultrathin films on Si in a vacuum or in O-2 da Rosa EBO, Morais J, Pezzi RP, Miotti L, Baumvol IJR Journal of the Electrochemical Society, 148(12), G695, 2001 |