| 1 |
Surface growth mechanisms and structural faulting in the growth of large single and spherulitic titanosilicate ETS-4 crystals
Miraglia PQ, Yilmaz B, Warzywoda J, Sacco A
Journal of Crystal Growth, 270(3-4), 674, 2004 |
| 2 |
Helical-type surface defects in GaN thin films epitaxially grown on GaN templates at reduced temperatures
Miraglia PQ, Preble EA, Roskowski AM, Einfeldt S, Davis RF
Journal of Crystal Growth, 253(1-4), 16, 2003 |
| 3 |
Evolution and growth of ZnO thin films on GaN(0001) epilayers via metalorganic vapor phase epitaxy
Smith TP, Mecouch WJ, Miraglia PQ, Roskowski AM, Hartlieb PJ, Davis RF
Journal of Crystal Growth, 257(3-4), 255, 2003 |
| 4 |
Domain structures in 6H-SiC wafers and their effect on the microstructures of GaN films grown on AlN and Al0.2Ga0.8N buffer layers
Preble EA, Miraglia PQ, Roskowski AM, Vetter WM, Dudley M, Davis RF
Journal of Crystal Growth, 258(1-2), 75, 2003 |
| 5 |
Helical-type surface defects in InGaN thin films epitaxially grown on GaN templates at reduced temperatures
Miraglia PQ, Preble EA, Roskowski AM, Einfeldt S, Lim SH, Liliental-Weber Z, Davis RF
Thin Solid Films, 437(1-2), 140, 2003 |
| 6 |
Surface instability and associated roughness during conventional and pendeo-epitaxial growth of GaN(0001) films via MOVPE
Roskowski AM, Miraglia PQ, Preble EA, Einfeldt S, Davis RF
Journal of Crystal Growth, 241(1-2), 141, 2002 |
