검색결과 : 42건
| No. | Article |
|---|---|
| 1 |
pH-Dependent surface charge at the interfaces between aluminum gallium nitride (AlGaN) and aqueous solution revealed by surfactant adsorption Wang JN, Zhang X, Li H, Wang C, Li HR, Keller S, Mishra UK, Nener BD, Parish G, Atkin R Journal of Colloid and Interface Science, 583, 331, 2021 |
| 2 |
pH-dependent surface properties of the gallium nitride - Solution interface mapped by surfactant adsorption Wang JA, Zhang X, Wang C, Li H, Li HR, Keller S, Mishra UK, Nener BD, Parish G, Atkin R Journal of Colloid and Interface Science, 556, 680, 2019 |
| 3 |
Growth of N-polar GaN by ammonia molecular beam epitaxy Fireman MN, Li HR, Keller S, Mishra UK, Speck JS Journal of Crystal Growth, 481, 65, 2018 |
| 4 |
Exploring metalorganic chemical vapor deposition of Si-alloyed Al2O3 dielectrics using disilane Chan SH, Keller S, Koksaldi OS, Gupta C, DenBaars SP, Mishra UK Journal of Crystal Growth, 464, 54, 2017 |
| 5 |
Growth of high purity N-polar (In,Ga)N films Lund C, Nakamura S, DenBaars SP, Mishra UK, Keller S Journal of Crystal Growth, 464, 127, 2017 |
| 6 |
Compositionally graded InGaN layers grown on vicinal N-face GaN substrates by plasma-assisted molecular beam epitaxy Hestroffer K, Lund C, Koksaldi O, Li HR, Schmidt G, Trippel M, Veit P, Bertram F, Lu N, Wang QX, Christen J, Kim MJ, Mishra UK, Keller S Journal of Crystal Growth, 465, 55, 2017 |
| 7 |
Metalorganic chemical vapor deposition of Al2O3 using trimethylaluminum and O-2 precursors: Growth mechanism and crystallinity Liu X, Chan SH, Wu F, Li Y, Keller S, Speck JS, Mishra UK Journal of Crystal Growth, 408, 78, 2014 |
| 8 |
Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors Arehart AR, Sasikumar A, Rajan S, Via GD, Poling B, Winningham B, Heller ER, Brown D, Pei Y, Recht F, Mishra UK, Ringel SA Solid-State Electronics, 80, 19, 2013 |
| 9 |
Implantation angle periphery effects on non-alloyed Si-implanted ohmic contacts for AlGaN/GaN high electron mobility transistors Kocan M, Recht F, Umana-Membreno GA, Kilburn MR, Nener BD, Mishra UK, Parish G Solid-State Electronics, 56(1), 56, 2011 |
| 10 |
Low resistivity contacts to plasma etched Mg-doped GaN using very low power inductively coupled plasma etching Baharin A, Pinto RS, Mishra UK, Nener BD, Parish G Thin Solid Films, 519(11), 3686, 2011 |