화학공학소재연구정보센터
검색결과 : 6건
No. Article
1 AlGaN/GaN HEMTs on free-standing GaN substrates: MBE growth and microwave characterization
Storm DF, Katzer DS, Roussos JA, Mittereder JA, Bass R, Binari SC, Hanser D, Preble EA, Evans KR
Journal of Crystal Growth, 301, 429, 2007
2 Microwave performance and structural characterization of MBE-grown AlGaN/GaN HEMTs on low dislocation density GaN substrates
Storm DF, Katzer DS, Roussos JA, Mittereder JA, Bass R, Binari SC, Zhou L, Smith DJ, Hanser D, Preble EA, Evans KR
Journal of Crystal Growth, 305(2), 340, 2007
3 Homoepitaxial growth of GaN and AlGaN/GaN heterostructures by molecular beam epitaxy on freestanding HVPE gallium nitride for electronic device applications
Storm DF, Katzer DS, Mittereder JA, Binari SC, Shanabrook BV, Xu X, McVey DS, Vaudo RP, Brandes GR
Journal of Crystal Growth, 281(1), 32, 2005
4 Growth and characterization of plasma-assisted molecular beam epitaxial-grown AlGaN/GaN heterostructures on free-standing hydride vapor phase epitaxy GaN substrates
Storm DF, Katzer DS, Mittereder JA, Binari SC, Shanabrook BV, Zhou L, Smith DJ, Xu X, McVey D, Vaudo RP, Brandes GR
Journal of Vacuum Science & Technology B, 23(3), 1190, 2005
5 Transient thermal simulations of a three-dimensional unit cell in power control systems and high-power microwave devices
Buot FA, Mittereder JA, Anderson WT, Ioannou DE
Solid-State Electronics, 46(1), 123, 2002
6 Extremely Low Specific Contact Resistivities for P-Type GaSb, Grown by Molecular-Beam Epitaxy
Tadayon B, Kyono CS, Fatemi M, Tadayon S, Mittereder JA
Journal of Vacuum Science & Technology B, 13(1), 1, 1995