화학공학소재연구정보센터
검색결과 : 6건
No. Article
1 SrTa2O6 induced low voltage operation of InGaZnO thin-film transistors
Takahashi T, Hoga T, Miyanaga R, Fujii MN, Ishikawa Y, Uraoka Y, Uchiyama K
Thin Solid Films, 665, 173, 2018
2 Formation of SiC delta-doped-layer structures by CVD
Takahashi K, Uchida M, Kusumoto O, Yamashita K, Miyanaga R, Kitabatake M
Materials Science Forum, 457-460, 743, 2004
3 Surface morphology of SiC epitaxial layers grown by vertical hot-wall type CVD
Takahashi K, Uchida M, Yokogawa T, Kusumoto O, Yamashita K, Miyanaga R, Kitabatake M
Materials Science Forum, 389-3, 243, 2002
4 Delta-doped layers of SiC grown by'pulse doping' technique
Takahashi K, Yokogawa T, Uchida M, Kusumoto O, Yamashita K, Miyanaga R, Kitabatake M
Materials Science Forum, 389-3, 247, 2002
5 SIMS analyses of SiO2/4H-SiC(0001) interface
Yamashita K, Kitabatake M, Kusumoto P, Takahashi K, Uchida M, Miyanaga R, Itoh H, Yoshikawa M
Materials Science Forum, 389-3, 1037, 2002
6 SiC vertical DACFET (Vertical delta-doped accumulation channel MOSFET)
Kusumoto O, Yokogawa T, Yamashita K, Takahashi K, Kitabatake M, Uchida M, Miyanaga R
Materials Science Forum, 389-3, 1211, 2002