| 1 |
Low-temperature (<= 300 degrees C) formation of orientation-controlled large-grain (>= 10 mu m) Ge-rich SiGe on insulator by gold-induced crystallization
Sadoh T, Park JH, Aoki R, Miyao M
Thin Solid Films, 602, 3, 2016 |
| 2 |
High Sn-concentration (similar to 8%) GeSn by low-temperature (similar to 150 degrees C) solid-phase epitaxy of a-GeSn/c-Ge
Sadoh T, Ooato A, Park JH, Miyao M
Thin Solid Films, 602, 20, 2016 |
| 3 |
Structural and electrical properties of Ge(111) films grown on Si(111) substrates and application to Ge(111)-on-Insulator
Sawano K, Hoshi Y, Kubo S, Arimoto K, Yamanaka J, Nakagawa K, Hamaya K, Miyao M, Shiraki Y
Thin Solid Films, 613, 24, 2016 |
| 4 |
Formation of Ge(111) on Insulator by Ge epitaxy on Si(111) and layer transfer
Sawano K, Hoshi Y, Endo S, Nagashima T, Arimoto K, Yamanaka J, Nakagawa K, Yamada S, Hamaya K, Miyao M, Shiraki Y
Thin Solid Films, 557, 76, 2014 |
| 5 |
Dynamic analysis of rapid-melting growth using SiGe on insulator
Matsumura R, Tojo Y, Kurosawa M, Sadoh T, Miyao M
Thin Solid Films, 557, 125, 2014 |
| 6 |
Coherent lateral-growth of Ge over insulating film by rapid-melting-crystallization
Sadoh T, Kurosawa M, Toko K, Miyao M
Thin Solid Films, 557, 135, 2014 |
| 7 |
In-depth analysis of high-quality Ge-on-insulator structure formed by rapid-melting growth
Chikita H, Matsumura R, Tojo Y, Yokoyama H, Sadoh T, Miyao M
Thin Solid Films, 557, 139, 2014 |
| 8 |
Sn-induced low-temperature (similar to 150 degrees C) crystallization of Ge on insulator
Ooato A, Suzuki T, Park JH, Miyao M, Sadoh T
Thin Solid Films, 557, 155, 2014 |
| 9 |
Room-temperature electrical creation of spin accumulation in n-Ge using highly resistive Fe3Si/n(+)-Ge Schottky-tunnel contacts
Hamaya K, Takemoto G, Baba Y, Kasahara K, Yamada S, Sawano K, Miyao M
Thin Solid Films, 557, 382, 2014 |
| 10 |
A magnetic tunnel junction with an L2(1)-ordered Co2FeSi electrode formed by all room-temperature fabrication processes
Fujita Y, Yamada S, Maeda Y, Miyao M, Hamaya K
Thin Solid Films, 557, 386, 2014 |
