검색결과 : 1건
| No. | Article |
|---|---|
| 1 |
Modified write-and-verify scheme for improving the endurance of multi-level cell phase-change memory using Ge-doped SbTe Zhang G, Wu Z, Jeong JH, Jeong DS, Yoo WJ, Cheong BK Solid-State Electronics, 76, 67, 2012 |
| No. | Article |
|---|---|
| 1 |
Modified write-and-verify scheme for improving the endurance of multi-level cell phase-change memory using Ge-doped SbTe Zhang G, Wu Z, Jeong JH, Jeong DS, Yoo WJ, Cheong BK Solid-State Electronics, 76, 67, 2012 |