검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Comparison of MOVPE grown GaAs solar cells using different substrates and group-V precursors Derluyn J, Dessein K, Flamand G, Mols Y, Poortmans J, Borghs G, Moerman I Journal of Crystal Growth, 247(3-4), 237, 2003 |
| 2 |
Effect of growth interrupt and growth rate on MOVPE-grown InGaN/GaN MQW structures Jacobs K, Van Daele B, Leys MR, Moerman I, Van Tendeloo G Journal of Crystal Growth, 248, 498, 2003 |
| 3 |
Chemical mapping of InGaN MQWs Sharma N, Tricker D, Thomas P, Bougrioua Z, Jacobs K, Cheyns J, Moerman I, Thrush T, Considine L, Boyd A, Humphreys C Journal of Crystal Growth, 230(3-4), 438, 2001 |
| 4 |
Material optimisation for AlGaN/GaN HFET applications Bougrioua Z, Moerman I, Sharma N, Wallis RH, Cheyns J, Jacobs K, Thrush EJ, Considine L, Beanland R, Farvacque JL, Humphreys C Journal of Crystal Growth, 230(3-4), 573, 2001 |
| 5 |
MOVPE based Zn diffusion into InP and InAsP/InP hetero structures Vanhollebeke K, D'Hondt M, Moerman I, Van Daele P, Demeester P Journal of Crystal Growth, 233(1-2), 132, 2001 |
| 6 |
Quantifying the smoothing of GaN epilayer growth by in situ laser interferometry Stafford A, Irvine SJC, Bougrioua Z, Jacobs K, Moerman I, Thrush EJ, Considine L Journal of Crystal Growth, 221, 142, 2000 |
| 7 |
InAlGaP microcavity LEDs on Ge-substrates Modak P, Delbeke D, Moerman I, Baets R, Van Daele P, Demeester P Journal of Crystal Growth, 221, 668, 2000 |
| 8 |
InP 1.3 mu m microcavity LEDs with high quantum efficiency Depreter B, Moerman I, Baets R, Van Daele P, Demeester P Journal of Crystal Growth, 221, 674, 2000 |
| 9 |
X-ray studies of group III-nitride quantum wells with high quality interfaces Fewster PF, Andrew NL, Hughes OH, Staddon C, Foxon CT, Bell A, Cheng TS, Wang T, Sakai S, Jacobs K, Moerman I Journal of Vacuum Science & Technology B, 18(4), 2300, 2000 |