화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 InAs/GaSb thin layers directly grown on nominal (001)-Si substrate by MOVPE for the fabrication of InAs FINFET
Cerba T, Hauchecorne P, Martin M, Moeyaert J, Alcotte R, Salem B, Eustache E, Bezard P, Chevalier X, Lombard G, Bassani F, David S, Beainy G, Tournie E, Patriarche G, Boutry H, Bawedin M, Baron T
Journal of Crystal Growth, 510, 18, 2019
2 Indium-oxide nanoparticles for RRAM devices compatible with CMOS back-end-off-line
Perez EAAL, Guenery PV, Abouzaid O, Ayadi K, Brottet S, Moeyaert J, Labau S, Baron T, Blanchard N, Baboux N, Militaru L, Souifi A
Solid-State Electronics, 143, 20, 2018
3 Anti phase boundary free GaSb layer grown on 300 mm (001)-Si substrate by metal organic chemical vapor deposition
Cerba T, Martin M, Moeyaert J, David S, Rouviere JL, Cerutti L, Alcotte R, Rodriguez JB, Bawedin M, Boutry H, Bassani F, Bogumilowicz Y, Gergaud P, Tournie E, Baron T
Thin Solid Films, 645, 5, 2018
4 Low temperature growth and physical properties of InAs thin films grown on Si, GaAs and In0.53Ga0.47As template
Alcotte R, Martin M, Moeyaert J, Gergaud P, David S, Cerba T, Bassani F, Ducroquet F, Bogumilowicz Y, Baron T
Thin Solid Films, 645, 119, 2018