검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
First-layer Si metallizations for thermally stable and smooth Ohmic contacts for AIGaN/GaN high electron mobility transistors Mohammed FM, Wang L, Adesida I Journal of Vacuum Science & Technology B, 25(2), 324, 2007 |
| 2 |
Mo/Al/Mo/Au Ohmic contact scheme for AlxGa1-xN/GaN high electron mobility transistors annealed at 500 degrees C Basu A, Mohammed FM, Guo S, Peres B, Adesida I Journal of Vacuum Science & Technology B, 24(2), L16, 2006 |
| 3 |
Ohmic contact formation mechanism of Ta/Al/Mo/Au and Ti/Al/Mo/Au metallizations on AlGaN/GaN HEMTs Mohammed FM, Wang L, Selvanathan D, Hu H, Adesida I Journal of Vacuum Science & Technology B, 23(6), 2330, 2005 |
| 4 |
Investigation of surface treatment schemes on n-type GaN and Al0.20Ga0.80N Selvanathan D, Mohammed FM, Bae JO, Adesida I, Bogart KHA Journal of Vacuum Science & Technology B, 23(6), 2538, 2005 |
| 5 |
Comparative study of Ti/AL/Mo/Au, Mo/Al/Mo/Au, and V/Al/Mo/Au ohmic contacts to AlGaN/GaN heterostructures Selvanathan D, Mohammed FM, Tesfayesus A, Adesida I Journal of Vacuum Science & Technology B, 22(5), 2409, 2004 |