검색결과 : 11건
| No. | Article |
|---|---|
| 1 |
Polarity governs atomic interaction through two-dimensional materials Kong W, Li HS, Qiao K, Kim Y, Lee K, Nie YF, Lee D, Osadchy T, Molnar RJ, Gaskill DK, Myers-Ward RL, Daniels KM, Zhang YW, Sundram S, Yu Y, Bae SH, Rajan S, Shao-Horn Y, Cho K, Ougazzaden A, Grossman JC, Kim J Nature Materials, 17(11), 999, 2018 |
| 2 |
Bulk GaN crystal growth by the high-pressure ammonothermal method D'Evelyn MP, Hong HC, Park DS, Lu H, Kaminsky E, Melkote RR, Perlin P, Lesczynski M, Porowski S, Molnar RJ Journal of Crystal Growth, 300(1), 11, 2007 |
| 3 |
Orthodox etching of HVPE-grown GaN Weyher JL, Lazar S, Macht L, Liliental-Weber Z, Molnar RJ, Muller S, Sivel VGM, Nowak G, Grzegory I Journal of Crystal Growth, 305(2), 384, 2007 |
| 4 |
Micro-Auger electron spectroscopy studies of chemical and electronic effects at GaN-sapphire interfaces Sun XL, Bradley ST, Jessen GH, Look DC, Molnar RJ, Brillson LJ Journal of Vacuum Science & Technology A, 22(6), 2284, 2004 |
| 5 |
Structure-property relationships in porous GaN generated by Pt-assisted electroless etching studied by Raman spectroscopy Williamson TL, Diaz DJ, Bohn PW, Molnar RJ Journal of Vacuum Science & Technology B, 22(3), 925, 2004 |
| 6 |
Effect of Ga-rich growth conditions on the optical properties of GaN films grown by plasma-assisted molecular beam epitaxy Sampath AV, Garrett GA, Collins CJ, Boyd P, Choe J, Newman PG, Shen H, Wraback M, Molnar RJ, Caissie J Journal of Vacuum Science & Technology B, 22(3), 1487, 2004 |
| 7 |
Low-energy electron-excited nanoluminescence studies of GaN and related materials Brillson LJ, Bradley ST, Goss SH, Sun X, Murphy MJ, Schaff WJ, Eastman LF, Look DC, Molnar RJ, Ponce FA, Ikeo N, Sakai Y Applied Surface Science, 190(1-4), 498, 2002 |
| 8 |
Morphology and luminescence of porous GaN generated via Pt-assisted electroless etching Diaz DJ, Williamson TL, Adesida I, Bohn PW, Molnar RJ Journal of Vacuum Science & Technology B, 20(6), 2375, 2002 |
| 9 |
Highly selective photoelectrochemical etching of nitride materials for defect investigation and device fabrication Visconti P, Reshchikov MA, Jones KM, Wang DF, Cingolani R, Morkoc H, Molnar RJ, Smith DJ Journal of Vacuum Science & Technology B, 19(4), 1328, 2001 |
| 10 |
Low frequency noise in n-GaN with high electron mobility Rumyantsev SL, Look DC, Levinshtein ME, Khan MA, Simin G, Adivarahan V, Molnar RJ, Shur MS Materials Science Forum, 338-3, 1603, 2000 |