검색결과 : 17건
| No. | Article |
|---|---|
| 1 |
A comprehensive study of the spontaneous formation of nanoassemblies in water by a "lock-and-key" interaction between two associative polymers Othman M, Bouchemal K, Couvreur P, Desmaele D, Morvan E, Pouget T, Gref R Journal of Colloid and Interface Science, 354(2), 517, 2011 |
| 2 |
GaAlN/GaN HEMT heterostructures grown on SiCopSiC composite substrates for HEMT application Poisson MADF, Magis M, Tordjman M, Di Persio J, Langer R, Toth L, Pecz B, Guziewicz M, Thorpe J, Aubry R, Morvan E, Sarazin N, Gaquiere C, Meneghesso G, Hoel V, Jacquet JC, Delage S Journal of Crystal Growth, 310(23), 5232, 2008 |
| 3 |
In situ epitaxial surface passivation of GaAlN/GaN HEMT heterostructures grown by LP-MOCVD Poisson MADF, Sarazin N, Magis M, Tordjman M, Morvan E, Aubry R, di Persio J, Grimbert B Journal of Crystal Growth, 298, 826, 2007 |
| 4 |
Conductance deep-level transient spectroscopy study of 1 mu m gate length 4H-SiC MESFETs Gassoumi M, Bluet JM, Dermoul I, Maaref H, Guillot G, Morvan E, Dua C, Brylinski C Solid-State Electronics, 50(2), 214, 2006 |
| 5 |
Hole-like Defects in n-Channel 4H-SIC MESFETs Observed by Current Transient Spectroscopy Bluet JM, Gassoumi M, Dermoul I, Chekir F, Maaref H, Guillot G, Morvan E, Dua C, Brylinski C Materials Science Forum, 483, 865, 2005 |
| 6 |
LP-MOCVD growth of GaAlN/GaN heterostructures on silicon carbide: application to HEMT devices Poisson MAD, Magis M, Tordjman M, Aubry R, Sarazin N, Peschang M, Morvan E, Delage SL, di Persio J, Quere R, Grimbert B, Hoel V, Delos E, Ducatteau D, Gaquiere C Journal of Crystal Growth, 272(1-4), 305, 2004 |
| 7 |
Room temperature implantation and activation kinetics of nitrogen and phosphorus in 4H-SiC crystals. Blanque S, Perez R, Godignon P, Mestres N, Morvan E, Kerlain A, Dua C, Brylinski C, Zielinski M, Camassel J Materials Science Forum, 457-460, 893, 2004 |
| 8 |
Effect of passivation on device stability and gate reverse characteristics on 4H-SiC MESFETs Kerlain A, Morvan E, Dua C, Caillas N, Brylinski C Materials Science Forum, 457-460, 1177, 2004 |
| 9 |
Deep level investigation by current and capacitance transient spectroscopy in 4H-SiC MESFETs on semi-insulating substrates. Gassoumi M, Sghaier N, Dermoul I, Chekir F, Maaref H, Bluet JM, Guillot G, Morvan E, Noblanc O, Dua C, Brylinski C Materials Science Forum, 457-460, 1185, 2004 |
| 10 |
Influence of semi-insulating substrate purity on the output characteristics of 4H-SiC MESFETs Sghaier N, Bluet JM, Souifi A, Guillot G, Morvan E, Brylinski C Materials Science Forum, 389-3, 1363, 2002 |