검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Growth of high performance InGaAs InP doped channel heterojunction field effect transistor with a strained GaInP Schottky barrier enhancement layer by gas source molecular beam epitaxy Kuo HC, Moser BG, Hsia H, Tang Z, Feng M, Stillman GE, Lin CH, Chen H Journal of Vacuum Science & Technology B, 17(3), 1139, 1999 |
| 2 |
Growth of carbon doping Ga0.47In0.53As using CBr4 by gas source molecular beam epitaxy for InP InGaAs heterojunction bipolar transistor applications Kuo HC, Ahmari D, Moser BG, Mu J, Hattendorf M, Scott D, Meyer R, Feng M, Stillman GE Journal of Vacuum Science & Technology B, 17(3), 1185, 1999 |
| 3 |
Structural and optical properties of 1.3 mu m wavelength InAsP/InP/InGaP strain-compensated multiple quantum well modulators grown by gas-source molecular beam epitaxy Kuo HC, Thomas S, Horton TU, Moser BG, Stillman GE, Lin CH, Chen H Journal of Vacuum Science & Technology B, 16(3), 1377, 1998 |