화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 X-ray imaging and TEM study of micropipes related to their propagation through porous SiC layer/SiC epilayer interface.
Argunova TS, Gutkin MY, Je JH, Sorokin LM, Mosina GN, Savkina NS, Shuman VB, Lebedev AA
Materials Science Forum, 457-460, 363, 2004
2 TEM (XHREM) and EDX studies of 6H-SiC porous layer as a substrate for subsequent homoepitaxial growth
Sorokin LM, Hutchison JL, Sloan J, Mosina GN, Savkina NS, Shuman VB, Lebedev AA
Materials Science Forum, 389-3, 271, 2002
3 Characterization of 3C-SiC/6H-SiC heterostructures grown by vacuum sublimation
Savkina NS, Strel'chuk AM, Sorokin LM, Mosina GN, Tregubova AS, Solov'ev VV, Lebedev AA
Materials Science Forum, 433-4, 293, 2002
4 Role of the defects under porous silicon carbide formation
Savkina NS, Sorokin LM, Hutchison JL, Sloan J, Tregubova AS, Mosina GN, Shuman VB, Ratnikov VV
Applied Surface Science, 184(1-4), 252, 2001