검색결과 : 34건
| No. | Article |
|---|---|
| 1 |
Electrical characteristics of silicon percolating nanonet-based field effect transistors in the presence of dispersion Cazimajou T, Legallais M, Mouis M, Ternon C, Salem B, Ghibaudo G Solid-State Electronics, 143, 83, 2018 |
| 2 |
An innovative large scale integration of silicon nanowire-based field effect transistors Legallais M, Nguyen TTT, Mouis M, Salem B, Robin E, Chenevier P, Ternon C Solid-State Electronics, 143, 97, 2018 |
| 3 |
Series resistance in different operation regime of junctionless transistors Jeon DY, Park SJ, Mouis M, Barraud S, Kim GT, Ghibaudo G Solid-State Electronics, 141, 92, 2018 |
| 4 |
Impact of series resistance on the operation of junctionless transistors Jeon DY, Park SJ, Mouis M, Barraud S, Kim GT, Ghibaudo G Solid-State Electronics, 129, 103, 2017 |
| 5 |
Behavior of subthreshold conduction in junctionless transistors Park SJ, Jeon DY, Montes L, Mouis M, Barraud S, Kim GT, Ghibaudo G Solid-State Electronics, 124, 58, 2016 |
| 6 |
Magnetoresistance mobility characterization in advanced FD-SOI n-MOSFETs Shin M, Shi M, Mouis M, Cros A, Josse E, Mukhopadhyay S, Piot B, Kim GT, Ghibaudo G Solid-State Electronics, 103, 229, 2015 |
| 7 |
Low temperature characterization of mobility in 14 nm FD-SOI CMOS devices under interface coupling conditions Shin M, Shi M, Mouis M, Cros A, Josse E, Kim GT, Ghibaudo G Solid-State Electronics, 108, 30, 2015 |
| 8 |
Interface and strain effects on the fabrication of suspended CVD graphene devices Aydin OI, Hallam T, Thomassin JL, Mouis M, Duesberg GS Solid-State Electronics, 108, 75, 2015 |
| 9 |
In depth characterization of electron transport devices in 14 nm FD-SOI CMOS Shin M, Shi M, Mouis M, Cros A, Josse E, Kim GT, Ghibaudo G Solid-State Electronics, 112, 13, 2015 |
| 10 |
Performance Optimization of Vertical Nanowire- based Piezoelectric Nanogenerators Hinchet R, Lee S, Ardila G, Montes L, Mouis M, Wang ZL Advanced Functional Materials, 24(7), 971, 2014 |