| 1 |
Crystal quality of InGaAs/AlAs/InAlAs coupled double quantum wells for intersubband transition devices
Gozu S, Mozume T
Journal of Crystal Growth, 425, 102, 2015 |
| 2 |
InGaAs/AlAs/InAlAs coupled double quantum wells for intersubband transition devices operating at 1550 nm
Gozu S, Mozume T, Kuwatsuka H, Ishikawa H
Journal of Crystal Growth, 378, 134, 2013 |
| 3 |
Strain control of InGaAs/AlAs/AlAsSb quantum wells by interface termination method between AlAs and AlAsSb
Gozu S, Mozume T, Ishikawa H
Journal of Crystal Growth, 323(1), 39, 2011 |
| 4 |
Molecular beam epitaxy of AlAsSb/AlAs/InGaAs coupled double quantum wells with extremely thin AlAs center barrier
Gozu S, Mozume T, Ishikawa H
Journal of Crystal Growth, 311(7), 1700, 2009 |
| 5 |
High-resolution X-ray diffraction analysis of InGaAs/AlAsSb coupled double quantum wells grown by molecular beam epitaxy
Mozume T, Gozu S
Journal of Crystal Growth, 311(7), 1707, 2009 |
| 6 |
Photoreflectance study of InGaAs/AlAsSb quantum wells grown by molecular beam epitaxy
Mozume T, Kasai J, Nagase M, Simoyama T, Ishikawa H
Journal of Crystal Growth, 301, 177, 2007 |
| 7 |
Strain compensation for InGaAs-AlAs-AlAsSb coupled double quantum wells by controlling the barrier layer composition
Nagase M, Mozume T, Simoyama T, Hasama T, Ishikawa H
Journal of Crystal Growth, 301, 240, 2007 |
| 8 |
Micro-Raman scattering study of InGaAs/(AlAs)/AlAsSb quantum wells grown by molecular beam epitaxy
Mozume T, Kasai J
Journal of Crystal Growth, 278(1-4), 178, 2005 |
| 9 |
Growth of InGaAs/AlAsSb single quantum wells with various AlAs diffusion-stopping layers
Kasai J, Mozume T
Journal of Crystal Growth, 278(1-4), 183, 2005 |
| 10 |
Dopant-induced interface disorder in InGaAs/AlAsSb heterostructures lattice matched to InP grown by molecular beam epitaxy
Mozume T, Georgiev N, Yoshida H
Journal of Crystal Growth, 227, 577, 2001 |
