| 1 |
An improved method for determining the critical energy for interface trap generation of n-MOSFETs under V-g = V-d/2 stress mode
Mu FC, Mao LF, Wei JL, Tan CH, Xu MZ
Solid-State Electronics, 45(3), 385, 2001 |
| 2 |
A novel method for determining the effect of interface trap generation on the degradation of n-MOSFETs under different hot-carrier stress modes
Mu FC, Xu MZ, Tan CH
Solid-State Electronics, 45(3), 435, 2001 |
| 3 |
Numerical analysis for the effects of interface roughness on the attenuation amplitudes of Fowler-Nordheim tunneling current oscillations in ultrathin MOSFETs
Mao LF, Zhang HQ, Wei JL, Mu FC, Tan CH, Xu MZ
Solid-State Electronics, 45(7), 1081, 2001 |
| 4 |
Rapid evaluation degradation activation energy of n-GaAs ohmic contacts with and without TiN diffusion barrier layers
Zhang WR, Li ZG, Mu FC, Sun YH, Cheng YH, Chen JX, Shen GD
Solid-State Electronics, 45(7), 1183, 2001 |
| 5 |
Proportional difference estimate method of determining the characteristic parameters of monomodal and multimodal Weibull distributions of time-dependent dielectric breakdown
Mu FC, Tan CH, Xu MZ
Solid-State Electronics, 44(8), 1419, 2000 |
