화학공학소재연구정보센터
검색결과 : 11건
No. Article
1 Different stress techniques and their efficiency on triple-gate SOI n-MOSFETs
Buuhler RT, Agopian PGD, Collaert N, Simoen E, Claeys C, Martino JA
Solid-State Electronics, 103, 209, 2015
2 Analysis of temperature variation influence on the analog performance of 45 degrees rotated triple-gate nMuGFETs
Pavanello MA, de Souza M, Martino JA, Simoen E, Claeys C
Solid-State Electronics, 70, 39, 2012
3 GIDL behavior of p- and n-MuGFET devices with different TiN metal gate thickness and high-k gate dielectrics
Galeti M, Rodrigues M, Martino JA, Collaert N, Simoen E, Claeys C
Solid-State Electronics, 70, 44, 2012
4 Impact of SEG on uniaxially strained MuGFET performance
Agopian PGD, Pacheco VH, Martino JA, Simoen E, Claeys C
Solid-State Electronics, 59(1), 13, 2011
5 Influence of the sidewall crystal orientation, HfSiO nitridation and TiN metal gate thickness on n-MuGFETs under analog operation
Rodrigues M, Galeti M, Martino JA, Collaert N, Simoen E, Claeys C
Solid-State Electronics, 62(1), 146, 2011
6 Effect of rotation, gate-dielectric and SEG on the noise behavior of advanced SOI MuGFETs
Put S, Mehta H, Collaert N, Van Uffelen M, Leroux P, Claeys C, Lukyanchikova N, Simoen E
Solid-State Electronics, 54(2), 178, 2010
7 Low-frequency noise and static analysis of the impact of the TiN metal gate thicknesses on n- and p-channel MuGFETs
Rodrigues M, Martino JA, Mercha A, Collaert N, Simoen E, Claeys C
Solid-State Electronics, 54(12), 1592, 2010
8 Innovative devices for integrated circuits - A design perspective
Schmitt-Landsiedel D, Werner C
Solid-State Electronics, 53(4), 411, 2009
9 Linear kink effect Lorentzians in the noise spectra of n- and p-channel fin field-effect transistors processed in standard and strained silicon-on-insulator substrates
Lukyanchikova N, Garbar N, Kudina V, Smolanka A, Claeys C, Simoen E
Solid-State Electronics, 53(6), 613, 2009
10 Threshold voltages of SOI MuGFETs
de Andrade MGC, Martino JA
Solid-State Electronics, 52(12), 1877, 2008