검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
Fin width dependence on gate controllability of InGaAs channel FinFETs with regrown source/drain Kise N, Kinoshita H, Yukimachi A, Kanazawa T, Miyamoto Y Solid-State Electronics, 126, 92, 2016 |
| 2 |
Comparison of contact resistance between accumulation-mode and inversion-mode multigate FETs Lee CW, Lederer D, Afzalian A, Yan R, Dehdashti N, Xiong W, Colinge JP Solid-State Electronics, 52(11), 1815, 2008 |