검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Flexible, multilevel, and low-operating-voltage resistive memory based on MoS2-rGO hybrid Wu LQ, Guo JJ, Zhong W, Zhang WJ, Kang X, Chen W, Du YW Applied Surface Science, 463, 947, 2019 |
| 2 |
Highly uniform switching of HfO2-x based RRAM achieved through Ar plasma treatment for low power and multilevel storage Qi M, Tao Y, Wang ZQ, Xu HY, Zhao XN, Liu WZ, Ma JG, Liu YC Applied Surface Science, 458, 216, 2018 |
| 3 |
Ultra-multiple and reproducible resistance levels based on intrinsic crystallization properties of Ge1Sb4Te7 film Yin Y, Iwashita S, Hosaka S, Wang T, Li JZ, Liu Y, Yu Q Applied Surface Science, 369, 348, 2016 |
| 4 |
Transient effects in partial-RESET programming of phase-change memory cells Braga S, Cabrini A, Torelli G Solid-State Electronics, 65-66, 250, 2011 |